发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce manufacturing cost by improving productivity and a yield of an electrooptical device by reducing the number of processes of manufacturing a pixel part having a reverse stagger type thin-film transistor, and a terminal part, and specifically reducing the number of photomasks used in a photolithography process, in an electrooptical device typified by an active matrix type liquid crystal display device. SOLUTION: By considering the above problem, a photomask (multiple-tone photomask) composed by forming a transmissive part, an intermediate transmissive part having a function reducing light intensity, and a shading part on a light-transmitting substrate is employed. In addition, a lift-off method without requiring an etching process for patterning a source electrode and a drain electrode of the pixel part, and source wiring extending in the terminal part is employed. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009124122(A) 申请公布日期 2009.06.04
申请号 JP20080269014 申请日期 2008.10.17
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 FUJIKAWA SAISHI;HOSOYA KUNIO;CHIBA YOKO
分类号 H01L21/336;H01L21/28;H01L21/3205;H01L21/3213;H01L29/417;H01L29/423;H01L29/49;H01L29/786 主分类号 H01L21/336
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