| 摘要 |
A manufacturing method for a semiconductor device simplifies a process for forming an oxide film of a high-voltage device, thereby reducing the manufacturing costs and manufacturing time of the high-voltage device. The manufacturing method includes applying a gate oxide material over a semiconductor wafer, applying a photoresist material over the gate oxide material, performing an exposure process and a primary development process on the photoresist material to form a photoresist pattern, performing an etching process using the photoresist pattern to form a gate oxide film, and performing a secondary development process to remove the photoresist pattern.
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