| 摘要 |
A nonvolatile semiconductor memory according to examples of the present invention includes a NAND string comprised memory cells connected in series, two select gate transistors each of which is connected to each end of the NAND string, and a write control circuit which makes a first write condition for a selected cell different from a second write condition for the selected cell. The first write condition is that the selected cell is one of two memory cells adjacent to the two select gate transistors. The second write condition is that the selected cell is one of the memory cells except for two memory cells adjacent to the two select gate transistors. |
