LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE, SUB-MOUNT, AND METHOD OF MANUFACTURING SUB-MOUNT

摘要

PROBLEM TO BE SOLVED: To further improve the output of a light-emitting device which uses a GaN-based LED chip having a transparent element substrate.

SOLUTION: The light-emitting device 100 includes a transparent plate material 21 having a top surface 21a and a backside 21b, and a GaN-based LED chip 30 fixed to a portion on the top surface 21a of the plate material 21. The GaN-based LED chip 30 comprises a transparent element substrate 31, an epitaxial film 32 of a GaN-based semiconductor formed on the element substrate 31, and a positive electrode and a negative electrode formed on the epitaxial film 32. The plate material 21 and element substrate 31 are bonded to be optically coupled to each other. The backside 21b of the plate material has an RMS roughness of ≤2 nm in a region of 1×1 μm. A reflective film R is formed on the backside 21b.

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