| 摘要 |
<P>PROBLEM TO BE SOLVED: To generate a laser beam having a deep ultraviolet wavelength by achieving low-threshold current densification while improving luminance efficiency by optimizing an AlGaN mixed crystal crystally-grown on a nonpolar face (an a-face, an m-face) or on a semipolar face of a hexagonal system and a mole fraction of AlN and GaN of an AlGaN crystal used in an active layer. <P>SOLUTION: An ultraviolet nitride semiconductor light-emitting element is provided with an m-face substrate 10, AlGaN layers 12, 14 arranged on the m-face substrate 10 and doped with n-type impurities, an Al<SB>X</SB>Ga<SB>1-X</SB>N/Al<SB>X</SB>Ga<SB>1-X</SB>N active layer 16 arranged on the AlGaN layers and having a quantum well structure composed of an Al<SB>X</SB>Ga<SB>1-X</SB>N barrier layer and an Al<SB>Y</SB>Ga<SB>1-Y</SB>N well layer, and AlGaN layers 18, 20 arranged on the Al<SB>X</SB>Ga<SB>1-X</SB>N/Al<SB>X</SB>Ga<SB>1-X</SB>N active layer and doped with p-type impurities. A face where a c-axis is inclined within a range between 40-90 degrees from the normal direction of a crystal growth main face is set as the crystal growth main face. The ultraviolet nitride semiconductor light-emitting element shows polarization properties that an optical electric-field component E is mainly in parallel with the c-axis (E//c). <P>COPYRIGHT: (C)2009,JPO&INPIT |
