| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can deburr the semiconductor device while maintaining the shape of a groove and also can remove damage to a silicon surface of a groove internal wall, and the semiconductor device manufactured by the manufacturing method. <P>SOLUTION: The manufacturing method of the semiconductor device includes at least the stages of: forming a buried region M on a substrate 1 for element isolation; forming patterns of grooves 7a, 7b and 7c on the substrate 1; forming protective films 8 on internal walls of the grooves 7a, 7b and 7c; etching back the protective films 8 under conditions of high anisotropy to remove the protective films 8 on the internal walls 7e of the grooves 7a, 7b and 7c in a gate parallel direction while leaving the protective films 8 at portions of the side walls 7d of the grooves 7a, 7b and 7c in a gate vertical direction; and subjecting regions where silicon is exposed by removing the protective films 8 to hydrogen baking processing to remove burrs 1a and 1a as by-products of the pattern formation of the grooves 7a, 7b and 7c. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
