| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device that can increase a step-up voltage of a word line upon data writing and can reduce program time. <P>SOLUTION: The semiconductor memory device includes a plurality of cell blocks comprising a plurality of memory cells, a sense amplifier, a bit line drive circuit, and a word line drive circuit. In a first writing sequence in which data from outside is written in a first cell block, the data is written in memory cells arranged in a checkered flag shape out of memory cells included in the first cell block, in a second writing sequence, the data written in the first cell block is written in a second cell block, the data is written in all memory cells connected to a selective word line in the second cell block. When the data is read out from the first cell block, the word line drive circuit applies a read-out voltage to two adjacent word lines at the same time. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
