发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <p><P>PROBLEM TO BE SOLVED: To solve the problem that the manufacturing cost of a conventional liquid crystal display device is high since at least four photomasks are used to manufacture a TFT. <P>SOLUTION: A semiconductor device forms a first resist pattern by exposure using a fist multi-gradation photomask (gray-tone or half-tone mask), and etches a first conductive layer, a first insulating layer, and first and second semiconductor layers, and forms an island-shaped single layer and an island-shaped laminate. In this case, sidewalls are formed on sides of the island-shaped single layer and the island-shaped laminate. A second resist pattern is formed by exposure using a second multi-gradation photomask, a second conductive layer and a second semiconductor layer are etched, and a thin-film transistor, a pixel electrode, and a connection terminal are formed. Then, a third resist pattern is formed by exposure from the back with the first conductive layer and the metal layer of the second conductive layer as a mask, a third insulating layer is etched, and protective insulating layers 123a-123d are formed. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009124121(A) 申请公布日期 2009.06.04
申请号 JP20080269012 申请日期 2008.10.17
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 HOSOYA KUNIO;FUJIKAWA SAISHI
分类号 H01L29/786;G02F1/1368;H01L21/336 主分类号 H01L29/786
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