| 摘要 |
PROBLEM TO BE SOLVED: To simplify a photolithography process by reducing the number of exposure masks, and to manufacture a reliable display device at low cost with satisfactory productivity. SOLUTION: In a method of manufacturing a display device having an inverted stagger type thin-film transistor in a channel etching structure, an etching process is performed using a mask layer formed of a multi-gradation mask, namely an exposure mask, where transmitted light has a plurality of intensities. A gate wiring layer 203 and source wiring layers 201, 202 are formed on a substrate by the same process, and a shape where the source wiring layer is divided (cut) is obtain at the cross section of the gate and source wiring layers. The divided source wiring layer is electrically connected via a conductive layer formed by the same process as for source and drain electrode layers on a gate insulating layer via an opening (contact hole). COPYRIGHT: (C)2009,JPO&INPIT |
