发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 Wirings each having a side face with a different angle, which is made accurately, in a desired portion over one mother glass substrate are provided without increasing the steps. With the use of a multi-tone mask, a photoresist layer is formed, which has a tapered shape in which the area of a cross section is reduced gradually in a direction away from one mother glass substrate. At the time of forming one wiring, one photomask is used and a metal film is selectively etched, whereby one wiring having a side face, the shape (specifically, an angle with respect to a principal plane of a substrate) of which is different depending on a place, is obtained.
申请公布号 US2009140438(A1) 申请公布日期 2009.06.04
申请号 US20080325474 申请日期 2008.12.01
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;KUWABARA HIDEAKI
分类号 H01L23/535;H01L21/027 主分类号 H01L23/535
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