OPTOELECTRONIC SEMICONDUCTOR BODY AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR BODY

摘要

The invention relates to an optoelectronic semiconductor body having an epitaxial semiconductor layer sequence based on nitride compound semiconductors. The semiconductor layer sequence comprises a buffer layer that is nominally undoped or doped in an at least partially n-conductive manner, an active zone suitable for emitting or receiving electromagnetic radiation, and a contact layer disposed between the buffer layer and the active zone that is doped in an n-conductive manner. The concentration of n-doping medium is greater in the contact layer than in the buffer layer. The semiconductor layer sequence comprises a recess extending through the buffer layer in which an electrical contact material is disposed, said recess adjoining the contact layer. The invention further relates to a method suitable for producing such a semiconductor body.