GAN-BASED LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME

摘要

There are provided a GaN-based light emitting diode (LED) capable of minimizing the structural defect of the GaN-based LED when a substrate is separated from the GaN-based LED and of maximizing light extraction efficiency and a method of fabricating the same. The GaN- based LED including a GaN-based semiconductor layer formed of a plurality of layers. A scattering inducing unit for scattering light generated from the GaN-based semiconductor layer is provided at the lower end of the GaN-based semiconductor layer. The scattering inducing unit may include a plurality of scattering inducing grooves formed on the lower surface of the GaN- based semiconductor layer. The plurality of scattering inducing grooves may be separated from each other by a uniform distance.