| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To recover all the defective memory cells even when defects are developed at each of memory cells in the memory sectors arranged in the same line. <P>SOLUTION: A semiconductor device includes memory sectors 12 consisting of non-volatile memory cells arranged in a matrix, global lines 24 connecting to bit lines 18 of the memory sectors 12 and crossing over the memory sectors 12 arranged in the same line, redundant sectors 14 arranged in the extending directions of the global lines 24, and a control circuit for checking whether or not the address of the memory sector 12 inputted from an external circuit matches the address of the memory sector 12 having defective memory cells and if matching, for changing the address of the memory sector 12 inputted from the external circuit to the address of the redundant sector 14 corresponding to the memory sector 12 having the defective memory cells. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
