| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that includes field-effect transistors having a structure allowing high-density mounting. <P>SOLUTION: The semiconductor device has: a substrate; a first insulating layer provided on the substrate; a conductive layer embedded into the first insulating layer; a pillar-shaped semiconductor part having a lower diffusion layer that is electrically connected with the conductive layer and is disposed just above the conductive layer, a semiconductor layer on the lower diffusion layer, and an upper diffusion layer on the semiconductor layer; a gate insulating film provided at the peripheral lateral side of the semiconductor layer; a gate electrode provided on the gate insulating film; and a second insulating layer provided to embed the gate electrode and the pillar-shaped semiconductor part. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
