| 摘要 |
A method for forming a tungsten film includes forming a tungsten nucleation layer having an amorphous-phase or a beta-phase over a semiconductor substrate. A first tungsten layer having a crystalline alpha-phase is then formed over the tungsten nucleation layer to form a low resistivity tungsten film. A second tungsten layer is formed over the first tungsten layer by a physical vapor deposition process, and the second tungsten layer has a large grain size similar to that of the low resistivity tungsten film. The tungsten film has both good surface roughness and low resistivity, thus enhancing the production yield and reliability of a semiconductor device.
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