PROCESS FOR PRODUCING LIGHT-ABSORBING LAYER IN CIS-TYPE THIN-FILM SOLAR CELL

摘要

A treatment object containing any one of Cu/Ga, Cu/In, and Cu-Ga/In is held in a heated state at a temperature T1 for a time ?t1 in such a state that a selenium source is introduced, thereby forming a selenide. Thereafter, a sulfur source is introduced to replace the atmosphere in the system with a sulfur atmosphere. In this state, the treatment object is held in a heated state at a temperature T2 for a time ?t2. The temperature of the treatment object is then decreased to T3, and, at that temperature, the treatment object is held in a heated state for a time ?t3.