| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III-V nitride semiconductor device produced by using a group III-V nitride semiconductor substrate which is thermally stable and whose surface is hardly roughened by thermal cleaning, and also to provide a method for production thereof. <P>SOLUTION: The group III-V nitride semiconductor substrate comprises a group III-V nitride semiconductor single crystal in a surface portion thereof, and the product of [H] and [D]: ([H]×[D]) is 1×10<SP>25</SP>or less äwherein [H] is the concentration of hydrogen atoms (the number of hydrogen atoms per cm<SP>3</SP>) in a surface portion of the single crystal; and [D] is a dislocation density (the number of dislocation per cm<SP>2</SP>) on the crystal surface}. The group III-V nitride semiconductor device comprises an epitaxial layer of a group III-V nitride semiconductor crystal formed on the above semiconductor substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT |
