| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To accurately execute reading of a memory cell without discharging respective bit lines before reading, in a semiconductor nonvolatile memory. <P>SOLUTION: In reading the memory cell 03, a bit line BL23 connected to a drain is connected to a voltage source Vd through a main bit line MBL[3] for application of a prescribed voltage, and a bit line BL24 connected to a source is connected to a sense amplifier 71 through a main bit line MBL[0]. At the time, a bit line BL25 is connected to a ground power source GND through a main bit line MBL[1]. That is, since the bit line BL25 near the bit line BL24 of a sense target forcibly becomes a ground level, flow-in of electric charges from it is not caused, flow-in of a current for the bit line BL24 can be prevented. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
