发明名称 METHOD FOR PURIFYING SILICON
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for purifying silicon enabling to efficiently removing boron being an impurity by preventing a deposit from adhering on the inner wall of a crucible. <P>SOLUTION: This method for purifying silicon comprises a first purification process in which a first flux containing silicon dioxide is added to molten silicon, and thereafter a first slag generated from the first flux is separated from the molten silicon, and a second purification process in which a second flux free from silicon dioxide is added to the molten silicon, and thereafter a second slag generated from the second flux is separated from the molten silicon. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009120460(A) 申请公布日期 2009.06.04
申请号 JP20070299298 申请日期 2007.11.19
申请人 SHARP CORP 发明人 KIDO MASAMI
分类号 C01B33/037;H01L31/04 主分类号 C01B33/037
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