| 摘要 |
The present invention relates to a method of forming a mask pattern. According to the present invention, a negative photoresist layer is formed over a substrate. Some regions of the negative photoresist layer are exposed. The exposed negative photoresist layers are developed. A positive photoresist layer is formed over the substrate including negative tone working photoresist layers. The substrate is baked so that a hydrogen gas is diffused into the positive photoresist layers at boundary portions of the negative tone working photoresist layers. The positive photoresist layers into which the hydrogen gas is diffused are developed.
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