METHOD OF CREATING SPIRAL INDUCTOR HAVING HIGH Q VALUE

摘要

A method for fabricating an inductor structure having an increased quality factor (Q) is provided. In one embodiment, a substrate is provided over which a spirally patterned conductor layer is formed to produce a planar spiral inductor. A via hole is formed in the substrate within the spirally patterned conductor layer, the via hole being formed by through silicon via (TSV). Thereafter, the via hole is filled with a core layer, wherein the core layer extends from a bottom surface of the substrate to a top surface thereof.