Black box model for large signal transient integrated circuit simulation

摘要

A modified "black box" integrated circuit simulation model is provided that is based only upon on the external steady-state and transient characteristics of a device under test (DUT). The method utilizes probe pulses as well as steady-state I-V and C-V look-up tables. In contrast to conventional black box simulation models, which support only steady-state and small signal frequency analysis, the disclosed method also supports large signal transient analysis.