SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide means for improving the electrical characteristic and stability of an electrode/silicon carbide interface or an oxide film (insulating film)/silicon carbide interface on a nonpolar surface of a silicon carbide epitaxial layer regardless of the defect density of a substrate in a semiconductor device using silicon carbide as the substrate. SOLUTION: A semiconductor device includes a semiconductor substrate composed of silicon carbide, a gate noninsulating film formed on the semiconductor substrate, and a gate electrode formed on the gate insulating film. A surface of connection of the semiconductor substrate surface to the gate insulating film is macroscopically in parallel with a nonpolar surface and microscopically includes a nonpolar surface and a polar surface. In the polar surface, one of an Si surface and a C surface is superior to the other. The semiconductor device includes a semiconductor substrate composed of silicon carbide and an electrode formed on the semiconductor substrate. A surface of connection of the semiconductor substrate surface to the electrode is macroscopically in parallel with a nonpolar surface and microscopically includes a nonpolar surface and a polar surface. In the polar surface, one of an Si surface and a C surface is superior to the other. COPYRIGHT: (C)2009,JPO&INPIT