METHOD FOR VAPOR-DEPOSITING METAL GATE ON HIGH-K DIELECTRIC FILM, METHOD FOR IMPROVING INTERFACE BETWEEN HIGH-K DIELECTRIC FILM AND METAL GATE, AND SUBSTRATE TREATMENT SYSTEM

摘要

PROBLEM TO BE SOLVED: To improve electrical properties and device performance by improving interface properties between a high-K dielectric film and a metal gate, in a metal-oxide film semiconductor field-effect transistor (MOSFET). SOLUTION: The method for improving the interface between the high-K dielectric film and the metal gate in manufacturing the MOSFET by vapor-depositing the metal gate on the high-K dielectric body includes an annealing step to anneal the substrate with the high-K dielectric film vapor-deposited in a heat annealing module, and a vapor-depositing step to vapor-deposit metal gate material on the annealed substrate in a metal gate vapor-depositing module. The annealing step and the vapor-depositing step are executed successively without breaking a vacuum. COPYRIGHT: (C)2009,JPO&INPIT