| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment device for achieving uniform etching working in a wafer face by adjusting the exhaust efficiency of the outer peripheral part of a wafer. SOLUTION: This plasma treatment device is provided with: a vacuum container 38; a sample stand 40 for placing and holding a wafer in the vacuum container; a gas supply means 107 for supplying treatment gas in the vacuum container; a plasma generation means 31 for generating plasma by supplying high frequency energy in the vacuum container; and an exhaust means 47 for exhausting gas in the vacuum container, and configured to carry out plasma treatment to the wafer. The sample stand 40 is provided with: a disc-shaped sample placing part for placing the wafer on the upper face; a ring-shaped member 39 having an interval in the outer periphery of the sample placing part; and a variable valve 41 for controlling an exhaust path for connecting a region in the inner peripheral side of the ring-shaped member to the exhaust means side of the sample stand at the outer peripheral side of the sample placing section and the flow rate of the exhaust path. COPYRIGHT: (C)2009,JPO&INPIT
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