发明名称 |
III-Nitride Light Emitting Device Including Porous Semiconductor Layer |
摘要 |
A semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown over a porous III-nitride region. A III-nitride layer comprising InN is disposed between the light emitting layer and the porous III-nitride region. Since the III-nitride layer comprising InN is grown on the porous region, the III-nitride layer comprising InN may be at least partially relaxed, i.e. the III-nitride layer comprising InN may have an in-plane lattice constant larger than an in-plane lattice constant of a conventional GaN layer grown on sapphire.
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申请公布号 |
US2009140274(A1) |
申请公布日期 |
2009.06.04 |
申请号 |
US20070950211 |
申请日期 |
2007.12.04 |
申请人 |
PHILIPS LUMILEDS LIGHTING COMPANY, LLC |
发明人 |
WIERER, JR. JONATHAN J.;EPLER JOHN E. |
分类号 |
H01L21/20;H01L33/00;H01L33/12;H01L33/16;H01L33/38 |
主分类号 |
H01L21/20 |
代理机构 |
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地址 |
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