发明名称 |
MOS Devices Having Elevated Source/Drain Regions |
摘要 |
A method for forming a semiconductor device includes providing a semiconductor substrate; forming a gate dielectric over the semiconductor substrate; forming a gate electrode over the gate dielectric; forming a slim spacer on sidewalls of the gate dielectric and the gate electrode; forming a silicon carbon (SiC) region adjacent the slim spacer; forming a deep source/drain region comprising at least a portion of the silicon carbon region; blanket forming a metal layer, wherein a first interface between the metal layer and the deep source/drain is higher than a second interface between the gate dielectric and the semiconductor substrate; and annealing the semiconductor device to form a silicide region. Preferably, a horizontal spacing between an inner edge of the silicide region and a respective edge of the gate electrode is preferably less than about 150 Å.
|
申请公布号 |
US2009140351(A1) |
申请公布日期 |
2009.06.04 |
申请号 |
US20070948823 |
申请日期 |
2007.11.30 |
申请人 |
LIN HONG-NIEN;KO CHIH-HSIN;CHEN HUNG-WEI;LEE WEN-CHIN |
发明人 |
LIN HONG-NIEN;KO CHIH-HSIN;CHEN HUNG-WEI;LEE WEN-CHIN |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|