发明名称 |
Voltage Controlled Static Random Access Memory |
摘要 |
A static random access memory (SRAM) comprising a plurality of SRAM cells, a plurality of wordlines (WL0-WLN) and a voltage regulator for driving the wordlines with a wordline voltage signal (VWLP). The wordline voltage signal is determined so as to reduce the likelihood of occurrence of read-disturbances and other memory instabilities. In one embodiment, the wordline voltage signal is determined as a function of the metastability voltage (VMETA) of the SRAM cells and an adjusted most positive down level voltage (VAMPDL) that is a function of a predetermined voltage margin (VM) and a most positive down level voltage (VMPDL) that corresponds to the read-disturb voltage of the SRAM cells.
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申请公布号 |
US2009141538(A1) |
申请公布日期 |
2009.06.04 |
申请号 |
US20090366770 |
申请日期 |
2009.02.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FIFIELD JOHN A.;PILO HAROLD |
分类号 |
G11C11/00;G11C5/14 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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