| 摘要 |
Disclosed is a semiconductor device capable of improving a control ability of a gate and enhancing operation characteristics of the gate. The semiconductor device comprises a semiconductor substrate having a recessed active region. An isolation structure is formed to define the recessed active region in the semiconductor substrate and the isolation structure includes a trench, a side wall insulation layer formed over the surface of the trench, and an insulation layer formed over the side wall insulation layer to fill the trench. A portion of the side wall insulation layer adjoining a gate forming area of the recessed active region is removed to form a moat, and a gate is formed over the semiconductor substrate including the moat.
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