NONVOLATILE STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

Disclosed is a nonvolatile storage device comprising a substrate (1); a first wiring (3); a first variable resistance element (5) and a lower electrode (6) of a first diode element, which are embedded in a first through hole (4); a second wiring (11) orthogonal to the first wiring (3) and composed of a plurality of layers, namely a semiconductor layer (7) of the first diode element, a conductive layer (8) and a semiconductor layer (10) of a second diode element, which are laminated in this order; a second variable resistance element (16) and an upper electrode (14) of the second diode element, which are embedded in a second through hole (13); and a third wiring (17). This nonvolatile storage device is characterized in that the conductive layer (8) of the second wiring (11) also serves as an upper electrode of the first diode element (9) and a lower electrode of the second diode element (15).