| 摘要 |
A CMP slurry composition is provided to improve a polishing speed for a phase change memory device, to ensure high polishing selectivity to a polishing stop film such as a phase change memory device and a silicon oxide film, and to form the polished surface of high quality by minimizing processing defection such as dishing and erosion. A CMP slurry composition for polishing a phase-change memory device comprises: ultrapure water; polishing particles; and at least one nitrogenous compound selected from aliphatic amine, aromatic amine, ammonium salt and ammonium base. When a phase change memory device including a polishing stop film and a phase change film is polished, a polishing speed ratio of a phase change film to a polishing stop film is 100 or greater. The primary particle diameter mean value of the polished particles is 1-200 nm. The mean value of the specific surface area is 10-500 m / g.
|
