发明名称 |
METHOD FOR CLEANING MASK SUBSTRATE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for cleaning a mask substrate, which minimizes adhesion of residual sulfuric acid ions on the mask substrate with a high removing rate of foreign matter, and never damages a light-shielding film or phase shift film of the mask substrate. <P>SOLUTION: The method for cleaning a mask substrate having a light shielding film or phase shift film on a transparent substrate comprises a first process of irradiating the mask substrate with ultraviolet ray; a second process of cleaning the mask substrate by dipping it in ozone water; a third process of cleaning the mask substrate by dipping it in hydrogen water, ammonia water or ammonia hyperhydration; and a fourth process of drying the mask substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2009122313(A) |
申请公布日期 |
2009.06.04 |
申请号 |
JP20070295219 |
申请日期 |
2007.11.14 |
申请人 |
DAINIPPON PRINTING CO LTD |
发明人 |
SHIMOMURA TAKEYA;KURIHARA MASAAKI |
分类号 |
G03F1/82;H01L21/027;H01L21/304 |
主分类号 |
G03F1/82 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|