发明名称 METHOD FOR CLEANING MASK SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for cleaning a mask substrate, which minimizes adhesion of residual sulfuric acid ions on the mask substrate with a high removing rate of foreign matter, and never damages a light-shielding film or phase shift film of the mask substrate. <P>SOLUTION: The method for cleaning a mask substrate having a light shielding film or phase shift film on a transparent substrate comprises a first process of irradiating the mask substrate with ultraviolet ray; a second process of cleaning the mask substrate by dipping it in ozone water; a third process of cleaning the mask substrate by dipping it in hydrogen water, ammonia water or ammonia hyperhydration; and a fourth process of drying the mask substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009122313(A) 申请公布日期 2009.06.04
申请号 JP20070295219 申请日期 2007.11.14
申请人 DAINIPPON PRINTING CO LTD 发明人 SHIMOMURA TAKEYA;KURIHARA MASAAKI
分类号 G03F1/82;H01L21/027;H01L21/304 主分类号 G03F1/82
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