| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory element which operates without a need for a forming process, and has high-speed and reversibly-stable rewrite characteristics and desirable resistance value retention characteristics, a manufacturing method of the nonvolatile memory element, which has high affinity with a semiconductor manufacturing process, and a nonvolatile semiconductor apparatus using the nonvolatile memory element. <P>SOLUTION: The nonvolatile memory element comprises a first electrode layer 103, a second electrode 107, and a resistance variable layer 106 which is disposed between the first electrode layer 103 and the second electrode layer 107, a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes 103 and 107, wherein the resistance variable layer 106 has a first region 104 comprising a first oxygen-deficient tantalum oxide having a composition represented by TaO<SB>x</SB>(0<x<2.5) and a second region 105 comprising a second oxygen-deficient tantalum oxide having a composition represented by TaO<SB>y</SB>(x<y<2.5), the first region and the second region being arranged in a thickness direction of the resistance variable layer. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
