| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a Cu-In-Ga ternary sintered alloy sputtering target, which is used for forming a Cu-In-Ga-Se quaternary alloy film for forming a light absorbing layer of a solar cell. SOLUTION: A Cu-Ga binary mother alloy powder having a component composition containing, by mass, 20-50% Ga, and the balance Cu with inevitable impurities as raw material powder, Cu-In binary mother alloy powder having a component composition containing 20-70% In, and the balance Cu with inevitable impurities as raw material powder, and pure Cu powder are prepared. These raw material powders are blended and mixed so as to have a component composition containing, 40-60% In, 1-45% Ga, and the balance Cu to produce the mixed powder. The obtained mixed powder is press-formed to manufacture a formed body, and the obtained formed body is sintered. COPYRIGHT: (C)2009,JPO&INPIT
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