| 摘要 |
A vapor phase growth apparatus and a vapor phase growth method capable of improving the yield rate of wafers by stopping infiltration of metal contaminants generated below a horizontal disk-like susceptor is provided. The vapor phase growth apparatus according to embodiments of the present invention includes a holder having an annular shape and on which a wafer can be placed, a disk-shaped susceptor on which the holder can be placed and provided on an upper surface thereof with circumferential steps inscribed in inner circumferential edge of the holder when the holder is placed, a rotation driving mechanism for rotating the susceptor and the holder at a predetermined rotational speed, a heating mechanism for heating the wafer placed on the holder, and a wafer push-up mechanism to push up an undersurface of the holder outside the rotation driving mechanism.
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