发明名称 |
METHOD FOR MANUFACTURING SOI SUBSTRATE |
摘要 |
A second single crystal semiconductor film is formed over a first single crystal semiconductor film; a separation layer is formed by addition of ions into the second single crystal semiconductor film; a second insulating film functioning as a bonding layer is formed over the second single crystal semiconductor film; a surface of a first SOI substrate and a surface of a second substrate are made to face each other, so that a surface of the second insulating film and the surface of the second substrate are bonded to each other; and then heat treatment is performed to cause cleavage at the separation layer, so that a second SOI substrate in which a part of the second single crystal semiconductor film is provided over the second substrate with the second insulating film interposed therebetween is formed.
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申请公布号 |
US2009142904(A1) |
申请公布日期 |
2009.06.04 |
申请号 |
US20080277352 |
申请日期 |
2008.11.25 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ISAKA FUMITO;KATO SHO;KOMATSU RYU;NEI KOSEI;SHIMOMURA AKIHISA |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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