发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
摘要 A semiconductor device includes a device isolation region formed on a part of shallow trench isolation (STI) sidewalls to relieve stress applied to an active region, thereby improving current flowing toward a channel region.
申请公布号 US2009140379(A1) 申请公布日期 2009.06.04
申请号 US20080119400 申请日期 2008.05.12
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM DAE YOUNG
分类号 H01L21/762;H01L23/00 主分类号 H01L21/762
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