| 摘要 |
<p>A method for fabricating a flash memory device is provided to maintain a device property and improve the reliability of the device by making the thickness of a tunneling oxide layer uniform. In a method for fabricating a flash memory device, a gate stack is formed on active area of a semiconductor substrate. A gate stack(150) is composed of a tunneling oxide film(105), a floating gate electrode(110), and a dielectric film and a control gate electrode. Both edges of the tunneling oxide film are etched by a certain width through a pull-back process, and an STI (Shallow Trench Isolation) pattern(101) is formed at the circumference of a semiconductor substrate active region.</p> |
