| 摘要 |
<p>A flash memory device and a manufacturing method thereof are provided to prevent excessive charge loss by trapping charge into a trap pattern which is formed with charge storage layer arranged discontinuously. A turner insulating layer(103) is formed on a semiconductor substrate(101), and a first nitride film(105) is formed on a turner insulating layer. The trap pattern(107a) is discontinuously formed on the first nitride film and the electric charge is stored, and the second nitride film(108) is formed on the first nitride film including the trap patterns. The insulating layer is formed on a second nitride film and a gate electrode is formed on the second insulating layer.</p> |
