发明名称 |
DIAMOND ELECTRON SOURCE AND METHOD OF MANUFACTURING THEREOF |
摘要 |
A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used in an electron microscope or other electron beam device, and a method for manufacturing the diamond electron source. One end of a pillar-shaped diamond monocrystal 10 is ground to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. A thin-film layer 14 having a prescribed shape is deposited on the ceramic layer 12 using a focused ion beam device, after which the ceramic layer 12 is patterned by etching using the thin-film layer 14 as a mask. A single sharpened tip is formed at one end of the pillar-shaped diamond monocrystal 10 by dry etching using the resultant ceramic mask. |
申请公布号 |
EP2065915(A1) |
申请公布日期 |
2009.06.03 |
申请号 |
EP20070807459 |
申请日期 |
2007.09.18 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
UEDA, AKIHIKO;YAMAMOTO, YOSHIYUKI;NISHIBAYASHI, YOSHIKI;IMAI, TAKAHIRO |
分类号 |
H01J9/02;H01J1/304;H01J37/065;H01J37/073 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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