发明名称 |
GaN substrate manufacturing method, GaN substrate, and semiconductor device |
摘要 |
A GaN substrate manufacturing method characterized in including a step of processing the surface of a substrate composed of a GaN single crystal into a concavely spherical form, based on differences in orientation of the crystallographic axis across the substrate surface. Processing the GaN substrate surface into a concavely spherical form reduces, in the post-process GaN substrate surface, differences in orientation of the crystallographic axis with respect to a normal. Furthermore, employing to manufacture semiconductor devices a GaN substrate in which differences in orientation of the crystallographic axis have been reduced makes it possible to uniformize in device characteristics a plurality of semiconductor devices fabricated from a single GaN substrate, which contributes to improving yields in manufacturing the semiconductor devices.
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申请公布号 |
EP2065490(A1) |
申请公布日期 |
2009.06.03 |
申请号 |
EP20080020043 |
申请日期 |
2008.11.17 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
IRIKURA, MASATO;NAKAHATA, SEIJI |
分类号 |
C30B29/40;H01L21/302;H01L29/06;H01L33/16;H01L33/32 |
主分类号 |
C30B29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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