| 摘要 |
A method for fabricating a semiconductor device is provided to reduce a manufacturing time by using a photoresist pattern with a silicide barrier pattern to form a silicide layer. A gate electrode is formed on a semiconductor substrate(S100), and the photoresist film is formed on the processed layer. A part of the photoresist film is exposed to the outside, and a photoresist pattern having an upper critical dimension larger than a lower critical dimension by performing a photolithography of exposed the photoresist pattern(S110). A metal layer is deposited on the whole of the semiconductor substrate in which the photoresist pattern is molded (S120). The photoresist pattern and the metal film on the photoresist pattern are stripped (S140). A metal layer remaining on the semiconductor is annealed and become silicide(S150).
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