| 摘要 |
A semiconductor device and a method of fabricating the same are provided to prevent reduction of an operation current due to stress by controlling a pattern effect adjacent to a trench defining an active region. A pad oxide layer and pad nitride layer are successively formed on the semiconductor substrate(210). The pad nitride layer of an element isolation region, the pad oxide layer, and a part of the semiconductor substrate are etched selectively to form a trench defining an active region. A side wall insulating film(218) is formed on the side wall of the trench, and a liner nitride film(220) is formed on the semiconductor substrate including the trench. The photosensitive film is formed on the liner nitride film, and then a mask pattern, exposing a part of liner nitride film of the liner, is formed by exposing and performing photolithography of a photosensitive film.
|
