| 摘要 |
A program verifying method of a non-volatile memory device is provided to apply different pass voltages to cells that receive interference during program actions of peripheral cells, when a verifying action is performed. Program/verifying actions of pages connected with first to n-1th word lines are sequentially completed(610). A program action of a first page connected with an nth word line is performed(620). A verifying voltage of the first page connected with the nth word line is set(630). Pass voltages of all word lines after the n+1th word line are set. The verifying action of the first page connected with the nth word line is carried out according to the set verifying voltage(640). A verifying action for a second page connected to the nth word line is performed according to each set voltage. |
