发明名称 |
THIN-FILM PIEZOELECTRIC BULK WAVE RESONATOR AND ITS MANUFACTURING METHOD, AND THIN-FILM PIEZOELECTRIC BULK WAVE RESONATOR FILTER USING THIN-FILM PIEZOELECTRIC BULK WAVE RESONATOR |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film piezoelectric bulk wave resonator which can realize energy confinement structure which can minimize a leakage path of bulk elastic wave to a substrate, and a high-frequency filter using it and its manufacturing method. <P>SOLUTION: A thin-film piezoelectric bulk wave resonator includes a lamination structure comprising a piezoelectric thin film and a first metallic electrode film and a second metallic electrode film holding at least a part of the piezoelectric thin-film therebetween. The first metallic electrode film is formed dispersed to an electrode surface opposite to the second metallic electrode film. The thin-film piezoelectric bulk wave resonator includes a void part on a substrate in a position corresponding to the lamination structure. The piezoelectric thin film, the first metallic electrode film and the second metallic electrode film, excepting a region of a wiring electrode electrically connected to the first metallic electrode film and a region of a wiring electrode electrically connected to the second metallic electrode film, are held in the air without coming into contact with an insulating substrate and a column is installed in the void part for supporting the lamination structure. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009124640(A) |
申请公布日期 |
2009.06.04 |
申请号 |
JP20070299126 |
申请日期 |
2007.11.19 |
申请人 |
HITACHI MEDIA ELECTORONICS CO LTD |
发明人 |
ASAI KENGO;MATSUMOTO HISAKATSU;ISOBE ATSUSHI |
分类号 |
H03H9/17;H01L41/09;H01L41/187;H01L41/22;H01L41/29;H01L41/332;H03H3/02;H03H9/05;H03H9/54;H03H9/70 |
主分类号 |
H03H9/17 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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