发明名称 |
SILICON WAFER HEAT TREATMENT METHOD |
摘要 |
A silicon wafer preferable to a semiconductor device is produced by determining a heat treatment condition hardly causing slip dislocations and heat-treating the silicon wafer under the condition. The resistance is calculated by using a calculation formula used for predicting the slip resistance of the wafer from the density, size, and residual solid-solution oxygen concentration of the oxygen precipitation in the silicon wafer, the state of oxygen precipitation such that heat treatment not causing any slip dislocation can be carried out is designed, and thus a silicon wafer heat treatment method under the heat treatment condition not causing any slip dislocation is determined. A silicon wafer heat-treated under such a condition can be provided.
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申请公布号 |
EP2065924(A1) |
申请公布日期 |
2009.06.03 |
申请号 |
EP20070828765 |
申请日期 |
2007.09.28 |
申请人 |
SUMCO TECHXIV CORPORATION |
发明人 |
SADOHARA, SHINYA;NAKAMURA, KOZO;YOSHINO, SHIRO |
分类号 |
H01L21/322;H01L21/324;H01L21/66 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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地址 |
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