发明名称 PAD FOR CHAMICAL MACHANICAL POLISHING
摘要 A pad for chemical and mechanical polishing is provided to reduce maintenance costs by making a slurry flow into a tunnel groove which is exposed to the outside when a groove is worn. A plurality of grooves(110) are formed at one sides of a chemical and mechanical polishing PAD(100), and a plurality of gain tunnels is formed at the lower part of the chemical and mechanical polishing pad where the plural gain grooves are formed. The plural gain grooves and the plural gain tunnel are crossed each other, and a rotation shaft connected with a platen is connected with a motor and is turned by the motor. The wafer is closely adhered to the chemical and mechanical pad while being engaged with a disk head.
申请公布号 KR20090055858(A) 申请公布日期 2009.06.03
申请号 KR20070122704 申请日期 2007.11.29
申请人 DONGBU HITEK CO., LTD. 发明人 KIM, JUNG MIN
分类号 H01L21/304;B24B37/04;B24B37/26 主分类号 H01L21/304
代理机构 代理人
主权项
地址