| 摘要 |
A method of forming a metal fuse of the semiconductor device is provided to make uniform a stress of a fuse in the fuse blowing and perform the stabilized fuse blowing. The method of forming a metal fuse of the semiconductor device comprises the formation step of the metallic fuse pattern(32), the formation step of the insulating layer(33), and the opening step of the metallic fuse pattern and the removal step of the etch residue. The formation step of the metallic fuse pattern is performed to form the metallic fuse pattern having the first thickness. The formation step of the insulating layer is performed to form the insulating layer covering the metallic fuse pattern and the substrate. The opening step of the metallic fuse pattern is performed to partly etch the insulating layer and open the metallic fuse pattern. The removal step of the etch residue is performed to remove the etch residue from the side wall of the metallic fuse pattern while etching the metallic fuse pattern.
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