SENSE AMPLIFIER OF SRAM OF MANUFACTURED BY LOW TEMPERATURE POLY-SILICON PROCESS

摘要

A sense amplifier of an SRAM(Static Random Access Memory) is provided to perform an action insensitive to property inconsistency between transistors, thereby executing an exact writing or reading action. A first transistor is connected between a positive power supply voltage and a first node. A second transistor is connected between the first node and a negative power supply voltage. A first capacitor is connected between a gate terminal and a source terminal of the first transistor. A first switch is connected between the gate terminal of the first transistor and the first node. An input selector is connected to a gate terminal of the second transistor. The input selector selectively receives a bit line and a signal of the bit line. A buffer unit(250) compares levels of first and second signals to generate predetermined logic.