| 摘要 |
<p>The method involves producing a trench through a sacrificial dielectric layer (104) and a semiconductor material e.g. silicon carbide, layer (106), where the trench completely surrounds a portion (111) and a portion (110) of the layers (104, 106), respectively. A portion of the trench is filled with a dielectric material (116) capable of resisting to an etching agent. The portion (111) of the layer (104) is etched with the agent through an opening in the layer (106). A portion of a suspended membrane is formed by the portion (110), where the membrane is made up of monocrystalline material.</p> |
